Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell

Research output: Contribution to journalArticle

Abstract

We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for higherature and high-power MOSFET applications. These measurements are made via both "rapid scan" frequency-swept EDMR and "slow scan" frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.

Original languageEnglish (US)
Article number014708
JournalReview of Scientific Instruments
Volume90
Issue number1
DOIs
StatePublished - Jan 1 2019

Fingerprint

microwave probes
sweep frequency
Magnetic resonance
magnetic resonance
field effect transistors
stations
Microwaves
wafers
Semiconductor materials
Paramagnetic resonance
electron paramagnetic resonance
Magnetic resonance measurement
unions
MOSFET devices
cavities
Silicon carbide
Amplification
Resonators
metal oxide semiconductors
silicon carbides

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

@article{3fe941e732f8476e87872c3c7b6167f4,
title = "Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station",
abstract = "We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for higherature and high-power MOSFET applications. These measurements are made via both {"}rapid scan{"} frequency-swept EDMR and {"}slow scan{"} frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.",
author = "McCrory, {Duane J.} and Anders, {Mark A.} and Ryan, {Jason T.} and Shrestha, {Pragya R.} and Cheung, {Kin P.} and Lenahan, {Patrick M.} and Campbell, {Jason P.}",
year = "2019",
month = "1",
day = "1",
doi = "10.1063/1.5053665",
language = "English (US)",
volume = "90",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station. / McCrory, Duane J.; Anders, Mark A.; Ryan, Jason T.; Shrestha, Pragya R.; Cheung, Kin P.; Lenahan, Patrick M.; Campbell, Jason P.

In: Review of Scientific Instruments, Vol. 90, No. 1, 014708, 01.01.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

AU - McCrory, Duane J.

AU - Anders, Mark A.

AU - Ryan, Jason T.

AU - Shrestha, Pragya R.

AU - Cheung, Kin P.

AU - Lenahan, Patrick M.

AU - Campbell, Jason P.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for higherature and high-power MOSFET applications. These measurements are made via both "rapid scan" frequency-swept EDMR and "slow scan" frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.

AB - We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for higherature and high-power MOSFET applications. These measurements are made via both "rapid scan" frequency-swept EDMR and "slow scan" frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.

UR - http://www.scopus.com/inward/record.url?scp=85060027253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060027253&partnerID=8YFLogxK

U2 - 10.1063/1.5053665

DO - 10.1063/1.5053665

M3 - Article

VL - 90

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 1

M1 - 014708

ER -