Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell

Research output: Contribution to journalArticle

Abstract

We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for higherature and high-power MOSFET applications. These measurements are made via both "rapid scan" frequency-swept EDMR and "slow scan" frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.

Original languageEnglish (US)
Article number014708
JournalReview of Scientific Instruments
Volume90
Issue number1
DOIs
StatePublished - Jan 1 2019

All Science Journal Classification (ASJC) codes

  • Instrumentation

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