Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

A. Weiszt, R. Dietrich, J. S. Lee, A. Vescan, H. Leier, E. L. Pinar, Joan Marie Redwing, H. Sledzikc

Research output: Contribution to journalArticle

Abstract

The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

Original languageEnglish (US)
JournalMicrowave Engineering Europe
Issue numberDECEMBER/JANUARY
StatePublished - Dec 1 2001

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Weiszt, A., Dietrich, R., Lee, J. S., Vescan, A., Leier, H., Pinar, E. L., Redwing, J. M., & Sledzikc, H. (2001). Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC. Microwave Engineering Europe, (DECEMBER/JANUARY).