Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

A. Weiszt, R. Dietrich, J. S. Lee, A. Vescan, H. Leier, E. L. Pinar, Joan Marie Redwing, H. Sledzikc

Research output: Contribution to journalArticle

Abstract

The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

Original languageEnglish (US)
JournalMicrowave Engineering Europe
Issue numberDECEMBER/JANUARY
StatePublished - Dec 1 2001

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Transconductance
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Weiszt, A., Dietrich, R., Lee, J. S., Vescan, A., Leier, H., Pinar, E. L., ... Sledzikc, H. (2001). Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC. Microwave Engineering Europe, (DECEMBER/JANUARY).
Weiszt, A. ; Dietrich, R. ; Lee, J. S. ; Vescan, A. ; Leier, H. ; Pinar, E. L. ; Redwing, Joan Marie ; Sledzikc, H. / Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC. In: Microwave Engineering Europe. 2001 ; No. DECEMBER/JANUARY.
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Weiszt, A, Dietrich, R, Lee, JS, Vescan, A, Leier, H, Pinar, EL, Redwing, JM & Sledzikc, H 2001, 'Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC', Microwave Engineering Europe, no. DECEMBER/JANUARY.

Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC. / Weiszt, A.; Dietrich, R.; Lee, J. S.; Vescan, A.; Leier, H.; Pinar, E. L.; Redwing, Joan Marie; Sledzikc, H.

In: Microwave Engineering Europe, No. DECEMBER/JANUARY, 01.12.2001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC

AU - Weiszt, A.

AU - Dietrich, R.

AU - Lee, J. S.

AU - Vescan, A.

AU - Leier, H.

AU - Pinar, E. L.

AU - Redwing, Joan Marie

AU - Sledzikc, H.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

AB - The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.

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M3 - Article

JO - Microwave Engineering Europe

JF - Microwave Engineering Europe

SN - 0960-667X

IS - DECEMBER/JANUARY

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Weiszt A, Dietrich R, Lee JS, Vescan A, Leier H, Pinar EL et al. Small signal and power performance of AlGaN/GaN HFETs grown on semi-insulating SiC. Microwave Engineering Europe. 2001 Dec 1;(DECEMBER/JANUARY).