The performance of AlGaN/GaN HFETS grown on semi-insulating SiC substrate is discussed. A record transconductance of 300mS/mm for a device with a gate length of 0.3μm and output power levels above 4W CW at 10GHz for an unpassivated 1.6mm device is demonstrated.
|Original language||English (US)|
|Journal||Microwave Engineering Europe|
|State||Published - Dec 1 2001|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering