Smart electrodes for ultralarge-area thin film capacitors

Patrick Daniels, Jon Ihlefeld, William Borland, Jon Paul Maria

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A process suitable for preparing metal-insulator-metal thin film capacitors with submicron insulating layers and top electrodes with cm-scale dimensions is presented. Most importantly, this process does not require sophisticated deposition equipment or a clean room environment. The key to large area yield is co-firing the insulator film with a non-dewetting electrode during the dielectric crystallization/ densification anneal. We propose a mechanism of electrode dewetting during the high temperature anneal where the metal laterally retreats from geometric asperities that compromise the integrity of the insulating layer. This behavior is driven by surface energy minimization, which promotes metal migration away from the regions of high curvature. This methodology is not material specific, and only requires a top electrode with a large contact angle to the dielectric in question. Using this technique, functional thin film capacitors with 2.5 cm lateral dimensions and 1 μm dielectric thicknesses can be routinely prepared.

Original languageEnglish (US)
Pages (from-to)1763-1766
Number of pages4
JournalJournal of Materials Research
Volume22
Issue number7
DOIs
StatePublished - Jul 1 2007

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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