Sodium, rubidium and cesium in the gate oxides of SiC MOSFETs

Blair Richard Tuttle, S. Dhar, S. H. Ryu, X. Zhu, J. R. Williams, L. C. Feldman, S. T. Pantelides

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Large group-I elements such as sodium, rubidium and cesium have recently been incorporated in the gate oxide of SiC power MOSFETs. In the case of sodium incorporation, enhanced field effect mobilities have been definitively observed. Based on density functional calculations, we find large group-I elements serve as shallow impurities near the interface. The enhanced mobility, observed in the case of sodium, can be explained in terms of an impurity band model.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages453-456
Number of pages4
DOIs
StatePublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Tuttle, B. R., Dhar, S., Ryu, S. H., Zhu, X., Williams, J. R., Feldman, L. C., & Pantelides, S. T. (2012). Sodium, rubidium and cesium in the gate oxides of SiC MOSFETs. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 453-456). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.453