Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Murat Okandan, Stephen J. Fonash, Osama O. Awadelkarim, Y. David Chan, Fred Preuninger

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Gate leakage current densities on the order of nA/μm2 at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high gate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak. Light emission in this region is also not observed in controls.

Original languageEnglish (US)
Pages (from-to)388-394
Number of pages7
JournalIEEE Electron Device Letters
Volume17
Issue number8
DOIs
StatePublished - Aug 1 1996

Fingerprint

Plasma etching
Plasma devices
Light emission
Leakage currents
Plasma density
Birds
Electric potential
Polysilicon
Oxides
Transistors
Current density

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Okandan, Murat ; Fonash, Stephen J. ; Awadelkarim, Osama O. ; Chan, Y. David ; Preuninger, Fred. / Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 8. pp. 388-394.
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Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure. / Okandan, Murat; Fonash, Stephen J.; Awadelkarim, Osama O.; Chan, Y. David; Preuninger, Fred.

In: IEEE Electron Device Letters, Vol. 17, No. 8, 01.08.1996, p. 388-394.

Research output: Contribution to journalArticle

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