Sol-gel derived SrBi2Ta2O9 thin films and electrical properties

K. Yamakawa, D. Ravichandran, A. S. Bhalla, S. Trolier-McKinstry, J. P. Dougherty, R. Roy

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Ferroelectric SrBi2Ta2O9 thin films were prepared from Sr metals, Ta-ethoxide and Bi, 2-ethylhexanoate. The films were prepared from both stoichiometric and 10 mol% Bi rich solutions. The stoichiometric film crystallized at 800°C had a spontaneous polarization value of 5 μC/cm2. The Bi rich film had lower crystallinity, finer grains and a smaller polarization. It was found to be necessary to anneal the films at high temperatures or for long time to achieve ferroelectricity. The non-crystalline states of sol-gel derived films differ from that observed in films deposited by physical vapor deposition. Crack free films were produced with the film thicknesses of 0.4 μm.

Original languageEnglish (US)
Pages (from-to)41-45
Number of pages5
JournalFerroelectrics, Letters Section
Volume22
Issue number1-2
DOIs
StatePublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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