Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

Dong Soo Paik, A. V.Prasada Rao, S. Komarneni

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.

Original languageEnglish (US)
Pages (from-to)141-151
Number of pages11
JournalFerroelectrics
Volume211
Issue number1 /4
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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