Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of remanent polarization and an increase of coercive field parameters.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics