Sol-gel silicate thin-film electronic properties

W. L. Warren; P. M. Lenahan; C. J. Brinker; C. S. Ashley; S. T. Reed; G. R. Shaffer

doi:10.1063/1.348366

Sol-gel silicate thin-film electronic properties

W. L. Warren, P. M. Lenahan, C. J. Brinker, C. S. Ashley, S. T. Reed, G. R. Shaffer

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.

Original language	English (US)
Pages (from-to)	4404-4408
Number of pages	5
Journal	Journal of Applied Physics
Volume	69
Issue number	8
DOIs	https://doi.org/10.1063/1.348366
State	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.348366

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abstract = "We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.",

author = "Warren, {W. L.} and Lenahan, {P. M.} and Brinker, {C. J.} and Ashley, {C. S.} and Reed, {S. T.} and Shaffer, {G. R.}",

year = "1991",

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AU - Warren, W. L.

AU - Lenahan, P. M.

AU - Brinker, C. J.

AU - Ashley, C. S.

AU - Reed, S. T.

AU - Shaffer, G. R.

PY - 1991

Y1 - 1991

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AB - We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.

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Sol-gel silicate thin-film electronic properties

Abstract

All Science Journal Classification (ASJC) codes

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