We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - 1991|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)