Solid-state phase formation between Pd thin films and GaSb

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Abstract

Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100-350°C for 10-360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.

Original languageEnglish (US)
Pages (from-to)48-55
Number of pages8
JournalJournal of Electronic Materials
Volume35
Issue number1
DOIs
StatePublished - Jan 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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