Solid-state reaction synthesis of a InSe/CuInSe2 lateral p-n heterojunction and application in high performance optoelectronic devices

Wei Feng, Wei Zheng, Xiaoshuang Chen, Guangbo Liu, Wenwu Cao, Pingan Hu

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Graphene-like layered semiconductors are a new class of materials for next generation electronic and optoelectronic devices due to their unique electrical and optical properties. A p-n junction is an elementary building block for electronics and optoelectronics devices. Here, we demonstrate the fabrication of a lateral p-n heterojunction diode of a thin-film InSe/CuInSe2 nanosheet by simple solid-state reaction. We discover that InSe nanosheets can be easily transformed into CuInSe2 thin film by reacting with elemental copper at a temperature of 300 °C. Photodetectors and photovoltaic devices based on this lateral heterojunction p-n diode show a large photoresponsivity of 4.2 A W-1 and a relatively high light-power conversion efficiency of 3.5%, respectively. This work is a giant step forward in practical applications of two-dimensional materials for next generation optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)983-989
Number of pages7
JournalChemistry of Materials
Volume27
Issue number3
DOIs
StatePublished - Feb 10 2015

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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