Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

Weichuan Huang, Yue Wen Fang, Yuewei Yin, Bobo Tian, Wenbo Zhao, Chuangming Hou, Chao Ma, Qi Li, Evgeny Y. Tsymbal, Chun Gang Duan, Xiaoguang Li

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.

Original languageEnglish (US)
Pages (from-to)5649-5656
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number6
DOIs
StatePublished - Feb 14 2018

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Memristors
Plasticity
Ferroelectric materials
Brain
Spin polarization
Tunnel junctions
Neurons
Artificial intelligence
Density functional theory
Magnetization
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Huang, W., Fang, Y. W., Yin, Y., Tian, B., Zhao, W., Hou, C., ... Li, X. (2018). Solid-State Synapse Based on Magnetoelectrically Coupled Memristor. ACS Applied Materials and Interfaces, 10(6), 5649-5656. https://doi.org/10.1021/acsami.7b18206
Huang, Weichuan ; Fang, Yue Wen ; Yin, Yuewei ; Tian, Bobo ; Zhao, Wenbo ; Hou, Chuangming ; Ma, Chao ; Li, Qi ; Tsymbal, Evgeny Y. ; Duan, Chun Gang ; Li, Xiaoguang. / Solid-State Synapse Based on Magnetoelectrically Coupled Memristor. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 6. pp. 5649-5656.
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Huang, W, Fang, YW, Yin, Y, Tian, B, Zhao, W, Hou, C, Ma, C, Li, Q, Tsymbal, EY, Duan, CG & Li, X 2018, 'Solid-State Synapse Based on Magnetoelectrically Coupled Memristor', ACS Applied Materials and Interfaces, vol. 10, no. 6, pp. 5649-5656. https://doi.org/10.1021/acsami.7b18206

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor. / Huang, Weichuan; Fang, Yue Wen; Yin, Yuewei; Tian, Bobo; Zhao, Wenbo; Hou, Chuangming; Ma, Chao; Li, Qi; Tsymbal, Evgeny Y.; Duan, Chun Gang; Li, Xiaoguang.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 6, 14.02.2018, p. 5649-5656.

Research output: Contribution to journalArticle

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AU - Ma, Chao

AU - Li, Qi

AU - Tsymbal, Evgeny Y.

AU - Duan, Chun Gang

AU - Li, Xiaoguang

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