Solution chemical constraints in the chemical-mechanical polishing of copper: Aqueous stability diagrams for the Cu-H?O and Cu-NH3-H2O systems

K. Osseo-Asare, Kamal K. Mishra

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35 Scopus citations

Abstract

A general graphical approach to the solution chemistry of chemical mechanical polishing is presented with the aid of a variety of aqueous stability diagrams, such as Eh-pH (Pourbaix), log{Metal}-pH, and log{Ligand}-pH diagrams. The common thermodynamic origin of these diagrams is highlighted. The important role played by concentration gradients in effecting chemical mechanical polishing is stressed and illustrated with the aid of stability diagrams generated for the Cu-H2O and Cu-NH3-H2O model systems. It is demonstrated that chemical mechanical polishing is feasible when the following two conditions are satisfied simultaneously: (a) at the metal surface dissolved metal concentration is high and/or ligand concentration is low (this favors oxide film formation), and (b) in the bulk aqueous phase the metal concentration is low and/or the ligand concentration is high (this favors the dissolution of film fragments).

Original languageEnglish (US)
Pages (from-to)1599-1607
Number of pages9
JournalJournal of Electronic Materials
Volume25
Issue number10
DOIs
StatePublished - Oct 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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