Solution-Synthesized In4SnSe4 Semiconductor Microwires with a Direct Band Gap

Du Sun, Yihuang Xiong, Yifan Sun, Ismaila Dabo, Raymond E. Schaak

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Semiconductor materials having direct band gaps that overlap well with the solar spectrum are important for a variety of applications in solar energy conversion and optoelectronics. Here, we identify the ternary chalcogenide In4SnSe4 as a direct band gap semiconductor having a band gap of approximately 1.6 eV. In4SnSe4, which contains isolated tetrahedral [SnIn4]8+ clusters embedded in an In-Se framework, was synthesized by precipitation from solution at 300 °C. The In4SnSe4 product consists of microwires having lengths of approximately 5-20 μm and widths of approximately 100-400 nm. Band structure calculations predict a direct electronic band gap of approximately 2.0 eV. Diffuse reflectance UV-visible spectroscopy qualitatively validates the predicted direct band gap, yielding an observed optical band gap of 1.6 eV.

Original languageEnglish (US)
Pages (from-to)1095-1098
Number of pages4
JournalChemistry of Materials
Volume29
Issue number3
DOIs
StatePublished - Feb 14 2017

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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