Space-charge-limited current in thin-film diamond

S. Ashok, K. Srikanth, A. Badzian, T. Badzian, R. Messier

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Abstract

The electrical conduction in thin-film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.

Original languageEnglish (US)
Pages (from-to)763-765
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number12
DOIs
StatePublished - Dec 1 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Ashok, S., Srikanth, K., Badzian, A., Badzian, T., & Messier, R. (1987). Space-charge-limited current in thin-film diamond. Applied Physics Letters, 50(12), 763-765. https://doi.org/10.1063/1.98038