Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs

Joungchel Lee, R. W. Collins, A. R. Heyd, F. Flack, Nitin Samarth

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The dielectric functions of 0.5-1.5-μm-thick Zn1 - xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1 - xCdxSe quantum well that provide accurate layer thicknesses and compositions.

Original languageEnglish (US)
Pages (from-to)2273-2275
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number15
DOIs
StatePublished - Oct 7 1996

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photons
parameterization
quantum wells
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, Joungchel ; Collins, R. W. ; Heyd, A. R. ; Flack, F. ; Samarth, Nitin. / Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs. In: Applied Physics Letters. 1996 ; Vol. 69, No. 15. pp. 2273-2275.
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Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs. / Lee, Joungchel; Collins, R. W.; Heyd, A. R.; Flack, F.; Samarth, Nitin.

In: Applied Physics Letters, Vol. 69, No. 15, 07.10.1996, p. 2273-2275.

Research output: Contribution to journalArticle

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T1 - Spectroellipsometry for characterization of Zn1 - XCdxSe multilayered structures on GaAs

AU - Lee, Joungchel

AU - Collins, R. W.

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AU - Samarth, Nitin

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