Spectroellipsometry studies of Zn1-xCdxSe: from optical functions to heterostructure characterization

Joungchel Lee, Byungyou Hong, J. S. Burnham, R. W. Collins, F. Flack, N. Samarth

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The dielectric functions of 0.5-1.5 μm Zn1×xCdxSe (0≤×≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Zn1×xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0. As a second example, we have determined the composition and thickness of a Zn1×xCdxSe quantum well between ZnSe barrier layers.

Original languageEnglish (US)
Pages (from-to)377-382
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume406
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Fingerprint

Epilayers
Refraction
Semiconductor quantum wells
Heterojunctions
Photons
barrier layers
Chemical analysis
refraction
oscillators
quantum wells
energy
photons
approximation
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Joungchel ; Hong, Byungyou ; Burnham, J. S. ; Collins, R. W. ; Flack, F. ; Samarth, N. / Spectroellipsometry studies of Zn1-xCdxSe : from optical functions to heterostructure characterization. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 406. pp. 377-382.
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abstract = "The dielectric functions of 0.5-1.5 μm Zn1×xCdxSe (0≤×≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Zn1×xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0. As a second example, we have determined the composition and thickness of a Zn1×xCdxSe quantum well between ZnSe barrier layers.",
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Spectroellipsometry studies of Zn1-xCdxSe : from optical functions to heterostructure characterization. / Lee, Joungchel; Hong, Byungyou; Burnham, J. S.; Collins, R. W.; Flack, F.; Samarth, N.

In: Materials Research Society Symposium - Proceedings, Vol. 406, 01.01.1996, p. 377-382.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Spectroellipsometry studies of Zn1-xCdxSe

T2 - from optical functions to heterostructure characterization

AU - Lee, Joungchel

AU - Hong, Byungyou

AU - Burnham, J. S.

AU - Collins, R. W.

AU - Flack, F.

AU - Samarth, N.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The dielectric functions of 0.5-1.5 μm Zn1×xCdxSe (0≤×≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Zn1×xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0. As a second example, we have determined the composition and thickness of a Zn1×xCdxSe quantum well between ZnSe barrier layers.

AB - The dielectric functions of 0.5-1.5 μm Zn1×xCdxSe (0≤×≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Zn1×xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0. As a second example, we have determined the composition and thickness of a Zn1×xCdxSe quantum well between ZnSe barrier layers.

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