Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

H. S. Craft, R. Collazo, M. D. Losego, S. Mita, Z. Sitar, Jon-Paul Maria

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

Original languageEnglish (US)
Article number082907
JournalApplied Physics Letters
Volume92
Issue number8
DOIs
StatePublished - Mar 6 2008

Fingerprint

spectroscopic analysis
x ray spectroscopy
photoelectron spectroscopy
coalescing
nitrides
conduction bands
valence
oxides
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Craft, H. S. ; Collazo, R. ; Losego, M. D. ; Mita, S. ; Sitar, Z. ; Maria, Jon-Paul. / Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface. In: Applied Physics Letters. 2008 ; Vol. 92, No. 8.
@article{c5072e50faf24d958d70093e76eb0db1,
title = "Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface",
abstract = "We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.",
author = "Craft, {H. S.} and R. Collazo and Losego, {M. D.} and S. Mita and Z. Sitar and Jon-Paul Maria",
year = "2008",
month = "3",
day = "6",
doi = "10.1063/1.2887878",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface. / Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, Jon-Paul.

In: Applied Physics Letters, Vol. 92, No. 8, 082907, 06.03.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

AU - Craft, H. S.

AU - Collazo, R.

AU - Losego, M. D.

AU - Mita, S.

AU - Sitar, Z.

AU - Maria, Jon-Paul

PY - 2008/3/6

Y1 - 2008/3/6

N2 - We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

AB - We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=40049101143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40049101143&partnerID=8YFLogxK

U2 - 10.1063/1.2887878

DO - 10.1063/1.2887878

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082907

ER -