Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface

H. S. Craft, R. Collazo, M. D. Losego, S. Mita, Z. Sitar, Jon-Paul Maria

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Abstract

We report an x-ray photoelectron spectroscopy (XPS) study of the CaOGaN interface. Epitaxial films of CaO (111) were grown on GaN (0002) and analyzed in situ using XPS. We observe Stranski-Krastanov growth, in which CaO coalesces rapidly, then converts to a three-dimensional mode. Data suggest coalescence within the first nanometer of film growth, indicating growth behavior different from published reports of the analogous MgO-GaN system. We find 1.0±0.2 eV for the valence band offset and a 2.5±0.2 eV conduction band offset. The results are discussed in terms of their utility in oxide-nitride electronic devices.

Original languageEnglish (US)
Article number082907
JournalApplied Physics Letters
Volume92
Issue number8
DOIs
StatePublished - Mar 6 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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