Spectroscopic ellipsometry as an in-situ monitoring tool for Bi₂Se₃ films grown by molecular beam epitaxy

Engineering & Materials Science

• Spectroscopic ellipsometry 100%
• Molecular beam epitaxy 85%
• Growth temperature 59%
• Film growth 58%
• Film thickness 39%
• Topological insulators 37%
• Monitoring 31%
• Light polarization 27%
• Surface reactions 26%
• Substrates 25%
• Sapphire 24%
• Heterojunctions 23%
• Temperature 22%

Chemical Compounds

• Molecular Beam Epitaxy 78%
• Ellipsometry 60%
• Liquid Film 26%
• Dielectric Function 13%
• Nonconductor 10%
• Surface Reaction 9%
• Dielectric Material 8%
• Time 3%

Physics & Astronomy

• ellipsometry 53%
• molecular beam epitaxy 46%
• film thickness 15%
• temperature 13%
• surface reactions 9%
• polarized light 8%
• sapphire 7%
• reactors 6%
• insulators 6%
• sensitivity 5%