Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

H. S. Craft, A. L. Rice, R. Collazo, Z. Sitar, Jon-Paul Maria

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the surface stoichiometry of Ga-polar GaN films grown by metalorganic chemical vapor deposition as studied by x-ray photoelectron spectroscopy. GaN film surfaces are found to be Ga-rich, with Ga:N ratios ranging from 1.3:1 to 3.2:1. In vacuo ion-beam sputter/annealing studies show that these treatments drive the apparent Ga:N surface composition farther from unity, either through a decrease in surface contamination, oxidation of the surface, or both. Simple annealing experiments decrease the Ga:N ratio. The measured GaN ratio is correlated with the GaN growth time, suggesting that residual Ga precursor after growth interacts with the GaN surface as it cools.

Original languageEnglish (US)
Article number082110
JournalApplied Physics Letters
Volume98
Issue number8
DOIs
StatePublished - Feb 21 2011

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stoichiometry
vapors
annealing
x ray spectroscopy
metalorganic chemical vapor deposition
unity
contamination
ion beams
photoelectron spectroscopy
oxidation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Craft, H. S. ; Rice, A. L. ; Collazo, R. ; Sitar, Z. ; Maria, Jon-Paul. / Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN. In: Applied Physics Letters. 2011 ; Vol. 98, No. 8.
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Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN. / Craft, H. S.; Rice, A. L.; Collazo, R.; Sitar, Z.; Maria, Jon-Paul.

In: Applied Physics Letters, Vol. 98, No. 8, 082110, 21.02.2011.

Research output: Contribution to journalArticle

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AU - Craft, H. S.

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