Spin dependent charge pumping: A new tool for reliability studies

B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have developed a new technique, spin dependent charge (SDCP) pumping which combines the unrivaled analytical power of EPR to identify the atomic scale nature of point defects with charge pumping, a widely used electrical characterization technique used to study interface/near interface defects in MOSFETs. We demonstrate SDCP to be a very powerful tool with potential to be of widespread use to the MOSFET reliability community.

Original languageEnglish (US)
Title of host publication2011 IEEE International Integrated Reliability Workshop Final Report, IRW 2011
Pages142-145
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011 - South Lake Tahoe, CA, United States
Duration: Oct 16 2011Oct 20 2011

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2011 30th IEEE International Integrated Reliability Workshop Final Report, IRW 2011
CountryUnited States
CitySouth Lake Tahoe, CA
Period10/16/1110/20/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Spin dependent charge pumping: A new tool for reliability studies'. Together they form a unique fingerprint.

Cite this