Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser, A. J. Lelis

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

Original languageEnglish (US)
Article number083504
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
StatePublished - Aug 22 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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