Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors

B. C. Bittel, P. M. Lenahan, J. T. Ryan, J. Fronheiser, A. J. Lelis

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors. SDCP combines a widely used electrical characterization tool with the most powerful analytical technique for providing atomic scale structure of point defects in electronic materials. SDCP offers a large improvement in sensitivity over the previously established EDMR technique called spin dependent recombination, offering higher sensitivity and accessing a wider energy range within the bandgap.

Original languageEnglish (US)
Article number083504
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
StatePublished - Aug 22 2011

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metal oxide semiconductors
pumping
field effect transistors
magnetic resonance
sensitivity
point defects
electronics
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Bittel, B. C. ; Lenahan, P. M. ; Ryan, J. T. ; Fronheiser, J. ; Lelis, A. J. / Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors. In: Applied Physics Letters. 2011 ; Vol. 99, No. 8.
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Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors. / Bittel, B. C.; Lenahan, P. M.; Ryan, J. T.; Fronheiser, J.; Lelis, A. J.

In: Applied Physics Letters, Vol. 99, No. 8, 083504, 22.08.2011.

Research output: Contribution to journalArticle

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