Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface

M. A. Jupina, P. M. Lenahan

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.

Original languageEnglish (US)
Pages (from-to)1650-1657
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume37
Issue number6
DOIs
StatePublished - Dec 1990

Fingerprint

Radiation
Defects
radiation
defects
Interface states
Ionizing radiation
Surface potential
Electron energy levels
radiation dosage
ionizing radiation
Silicon
field effect transistors
Geometry
energy levels
silicon
geometry

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

@article{9de00d3cbdec447daa2249f757f59cfe,
title = "Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface",
abstract = "The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.",
author = "Jupina, {M. A.} and Lenahan, {P. M.}",
year = "1990",
month = "12",
doi = "10.1109/23.101174",
language = "English (US)",
volume = "37",
pages = "1650--1657",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Spin dependent recombination : A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface. / Jupina, M. A.; Lenahan, P. M.

In: IEEE Transactions on Nuclear Science, Vol. 37, No. 6, 12.1990, p. 1650-1657.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spin dependent recombination

T2 - A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface

AU - Jupina, M. A.

AU - Lenahan, P. M.

PY - 1990/12

Y1 - 1990/12

N2 - The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.

AB - The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.

UR - http://www.scopus.com/inward/record.url?scp=0025595672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025595672&partnerID=8YFLogxK

U2 - 10.1109/23.101174

DO - 10.1109/23.101174

M3 - Article

AN - SCOPUS:0025595672

VL - 37

SP - 1650

EP - 1657

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -