Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface

M. A. Jupina, P. M. Lenahan

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


The spin dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. Our SDR results show that the 29Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.

Original languageEnglish (US)
Pages (from-to)1650-1657
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1990

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Spin dependent recombination: A <sup>29</sup>Si hyperfine study of radiation-induced P<sub>b</sub> centers at the Si/SiO<sub>2</sub> interface'. Together they form a unique fingerprint.

Cite this