Spin dependent recombination at deep-level centers in 6H silicon carbide/silicon metal oxide semiconductor field effect transistors

D. J. Meyer, N. A. Bohna, P. M. Lenahan, A. Lelis

Research output: Contribution to journalConference article

10 Scopus citations

Abstract

We utilize a. particularly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC MOSFETs. We find that the SDR response is strongly correlated to SiC/SiO2 interface recombination currents and also find that the magnitude of the SDR response is correlated with processing induced changes in interface trap density, an extremely strong indication that we are observing the dominating interface/near interface trapping defects. The SDR response is extremely large, as large as one part in 350. To the best of our knowledge, this is the largest SDR response ever reported in a semiconductor device at room temperature. This result strongly indicates that SDR will be a powerful tool in exploring deep level defect centers in SiC based devices.

Original languageEnglish (US)
Pages (from-to)477-480
Number of pages4
JournalMaterials Science Forum
Volume457-460
Issue numberI
StatePublished - Nov 29 2004
EventProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, France
Duration: Oct 5 2003Oct 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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