Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

J. T. Ryan, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan, J. P. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Recent work has shown that the negative bias temperature instability (NBTI) can be significantly suppressed through the incorporation of fluorine in the gate oxide of pure SiO2 pMOSFETs. In this study, we use spin dependent recombination and standard gated diode current measurements to investigate the atomic-scale processes involved in fluorine's suppression of NBTI. We find that fluorine can effectively passivate Si/SiO2 P b0 center defect precursors, but is much less effective at passivating Si/SiO2 Pb1 center defect precursors. Since these two defects have significantly different densities of states, our results may be useful in modeling NBTI response in fluorinated oxide devices. Our results also provide a fundamental explanation for the observation that fluorination has a strong effect on NBTI in "pure" SiO2 MOS devices, but is ineffective at reducing NBTI in nitrided oxide devices.

Original languageEnglish (US)
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages988-991
Number of pages4
DOIs
StatePublished - Nov 12 2009
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: Apr 26 2009Apr 30 2009

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period4/26/094/30/09

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Ryan, J. T., Lenahan, P. M., Krishnan, A. T., Krishnan, S., & Campbell, J. P. (2009). Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability. In 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (pp. 988-991). [5173396] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173396