Spin dependent transport in hybrid magnetic tunnel junctions

S. H. Chun, S. J. Potashnik, K. C. Ku, P. Schiffer, N. Samarth

Research output: Contribution to journalConference article

Abstract

A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.

Original languageEnglish (US)
Pages (from-to)131-134
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
Publication statusPublished - Dec 1 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: Sep 12 2004Dec 16 2004

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chun, S. H., Potashnik, S. J., Ku, K. C., Schiffer, P., & Samarth, N. (2005). Spin dependent transport in hybrid magnetic tunnel junctions. Institute of Physics Conference Series, 184, 131-134.