Spin dependent trapping at a silicon grain boundary

P. M. Lenahan, W. K. Schubert

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have observed, for the first time, spin dependent trapping in a silicon grain boundary. The results are quantitatively explained in terms of paramagnetic "dangling bond" interface traps and a majority carrier thermionic emission model. This is a sensitive and informative probe of defects in grain boundaries.

Original languageEnglish (US)
Pages (from-to)423-425
Number of pages3
JournalSolid State Communications
Volume47
Issue number6
DOIs
StatePublished - Aug 1983

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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