Spin-on polymer gate dielectric for high performance organic thin film transistors

C. D. Sheraw, D. J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to device using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.

Original languageEnglish (US)
Pages (from-to)403-408
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume558
StatePublished - 2000

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Gate dielectrics
Thin film transistors
Polymers
transistors
polymers
thin films
Polyimides
Surface roughness
polyimides
surface roughness
grain size
Threshold voltage
Atomic force microscopy
pentacene
threshold voltage
X ray diffraction
Substrates
insulators
atomic force microscopy
slopes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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Spin-on polymer gate dielectric for high performance organic thin film transistors. / Sheraw, C. D.; Gundlach, D. J.; Jackson, Thomas Nelson.

In: Materials Research Society Symposium - Proceedings, Vol. 558, 2000, p. 403-408.

Research output: Contribution to journalArticle

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