Spin-orbit coupling and weak antilocalization in the thermoelectric material β-K2Bi8Se13

J. Hu, J. Y. Liu, Z. Q. Mao

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We have studied the effect of spin-orbital coupling (SOC) on the electronic transport properties of the thermoelectric material β-K2Bi 8Se13 via magnetoresistance measurements. We found that the strong SOC in this material results in the weak antilocalization (WAL) effect, which can be described well by a threedimensional weak localization model. The phase coherence length extracted from theoretical fitting exhibits a powerlaw temperature dependence, with an exponent around 2.1, indicating that the electron dephasing is governed by electron-transverse phonon interactions. As in topological insulators, the WAL effect in β-K2Bi 8Se13 can be quenched by magnetic impurities (Mn) but is robust against nonmagnetic impurities (Te). Although our magnetotransport studies provide no evidence for topological surface states, our analyses suggest that SOC plays an important role in determining the thermoelectric properties of β-K2Bi8Se13.

Original languageEnglish (US)
Article number095801
JournalJournal of Physics Condensed Matter
Issue number9
StatePublished - Mar 5 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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