Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

S. H. Chun, S. J. Potashnik, K. C. Ku, P. Schiffer, N. Samarth

Research output: Contribution to journalArticlepeer-review

83 Scopus citations

Abstract

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (Ga1-xMnxAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a √V dependence of the conductance, suggesting a correlation gap in the density of states of Ga1-xMnxAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

Original languageEnglish (US)
Article number100408
Pages (from-to)1004081-1004084
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number10
DOIs
StatePublished - Sep 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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