Spin-polarized tunneling study of spin-momentum locking in topological insulators

Luqiao Liu, A. Richardella, Ion Garate, Yu Zhu, N. Samarth, Ching Tzu Chen

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Abstract

We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and bismuth antimony telluride, we verified the topological-surface-state origin of the observed giant spin signals. By injecting energetic electrons into bismuth selenide, we further studied the energy dependence of the effective spin polarization at the TI surface. The experimentally verified large spin polarization, as well as our calculations, provides new insights into optimizing TI materials for near room-temperature spintronic applications.

Original languageEnglish (US)
Article number235437
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number23
DOIs
StatePublished - Jun 22 2015

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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