Spin susceptibility and effective mass of a 2D electron system in GaAs heterostructures towards the weak interacting regime

Y. W. Tan, Jun Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West

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Abstract

We determined the spin susceptibility χ and the effective mass m* towards the high density limit. Using a tunable GaAs/AlGaAs heterostructure, we can vary the 2D electron density from n = 1 × 1010 cm- 2 to 4 × 1011 cm- 2. From ∼ 5 × 1010 cm- 2 to our highest densities the mass values fall ∼ 10 % below the band mass of GaAs. The enhancement of χ decreases monotonically from a factor of 3 to 0.88 with increasing density. It continues to follow a previously observed power law, which leads to an unphysical limit for n → ∞. Band structure effects affecting mass and g-factor become appreciable for large n and, when taken into account, lead to the correct limiting behavior of χ. Numerical calculations are in qualitative agreement with our data but differ in detail.

Original languageEnglish (US)
Pages (from-to)260-263
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume34
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2006

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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