Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

Y. W. Tan, J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs AlGaAs heterostructure. The band structure effects, modifying mass and g -factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4× 1011 cm-2. In the high density limit, χ tends correctly towards χ→1 and compare well with recent theory.

Original languageEnglish (US)
Article number045334
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number4
DOIs
StatePublished - Feb 27 2006

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Band structure
Carrier concentration
Heterojunctions
magnetic permeability
Electrons
aluminum gallium arsenides
electrons
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region. / Tan, Y. W.; Zhu, J.; Stormer, H. L.; Pfeiffer, L. N.; Baldwin, K. W.; West, K. W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 73, No. 4, 045334, 27.02.2006.

Research output: Contribution to journalArticle

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T1 - Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

AU - Tan, Y. W.

AU - Zhu, J.

AU - Stormer, H. L.

AU - Pfeiffer, L. N.

AU - Baldwin, K. W.

AU - West, K. W.

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