Spin-transfer-torque RAM and domain wall memory devices

Rekha Govindaraj, Mohammad Nasim Imtiaz Khan, Swaroop Ghosh

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    116In today's highly integrated circuits and systems, satisfying the functionality, frequency, and thermal design power (TDP) requirements is not adequate. It is essential to ensure the security and privacy of the overall system. The contemporary business model involves the untrusted third party in every step of the integrated circuit (IC) manufacturing process—from design to synthesis and layout all the way to fabrication and packaging. The trend of integrating third-party intellectual property (IP) blocks into the design makes the problem more complex. Broadly, the attacks on hardware could fall under: Malicious modifications: The hardware Trojans can be inserted in the ICs, which causes malfunctioning of IC or leak information for instance. Cloning/fake IC: The adversary can imitate the design, fabricate, and sell at a lower price, which lowers the market for the genuine IC. Hacking/eavesdropping: The adversary eavesdrops on the communication channel to crack the secret key for malicious intent. Side-channel attacks: Side channels, for example, current and voltage, are monitored to extract the secret information from the device. Reverse engineering: IC design details are revealed by peeling off the layers of the fabrication process using chemicals and mechanical methods, which in turn reveal the secret design information. IC recycling: Unused or barely used ICs are recycled from older PCBs and sold at a reduced price compared to genuine new ICs from the original manufacturer.

    Original languageEnglish (US)
    Title of host publicationSecurity Opportunities in Nano Devices and Emerging Technologies
    PublisherCRC Press
    Pages115-142
    Number of pages28
    ISBN (Electronic)9781351965903
    ISBN (Print)9781138035775
    DOIs
    StatePublished - Jan 1 2017

    Fingerprint

    Domain walls
    Random access storage
    Integrated circuits
    Torque
    Data storage equipment
    Hardware
    Fabrication
    Peeling
    Reverse engineering
    Cloning
    Polychlorinated biphenyls
    Recycling
    Packaging
    Cracks
    Electric potential
    Industry

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Govindaraj, R., Khan, M. N. I., & Ghosh, S. (2017). Spin-transfer-torque RAM and domain wall memory devices. In Security Opportunities in Nano Devices and Emerging Technologies (pp. 115-142). CRC Press. https://doi.org/10.1201/9781315265056
    Govindaraj, Rekha ; Khan, Mohammad Nasim Imtiaz ; Ghosh, Swaroop. / Spin-transfer-torque RAM and domain wall memory devices. Security Opportunities in Nano Devices and Emerging Technologies. CRC Press, 2017. pp. 115-142
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    Govindaraj, R, Khan, MNI & Ghosh, S 2017, Spin-transfer-torque RAM and domain wall memory devices. in Security Opportunities in Nano Devices and Emerging Technologies. CRC Press, pp. 115-142. https://doi.org/10.1201/9781315265056

    Spin-transfer-torque RAM and domain wall memory devices. / Govindaraj, Rekha; Khan, Mohammad Nasim Imtiaz; Ghosh, Swaroop.

    Security Opportunities in Nano Devices and Emerging Technologies. CRC Press, 2017. p. 115-142.

    Research output: Chapter in Book/Report/Conference proceedingChapter

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    Govindaraj R, Khan MNI, Ghosh S. Spin-transfer-torque RAM and domain wall memory devices. In Security Opportunities in Nano Devices and Emerging Technologies. CRC Press. 2017. p. 115-142 https://doi.org/10.1201/9781315265056