The study of spin-dependent phenomena involving free carriers in magnetic semiconductor heterostructures has seen rapid advances over the past year, allowing fresh insights into spin transport, localization and carrier-mediated magnetism. These experiments have been enabled by the realization of extrinsically and intrinsically doped magnetic semiconductor heterostructures derived from the II-VI and III-V semiconductors.
|Original language||English (US)|
|Number of pages||5|
|Journal||Current Opinion in Solid State and Materials Science|
|State||Published - Jan 1 1998|
All Science Journal Classification (ASJC) codes
- Materials Science(all)