Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of vacuum science & technology|
|State||Published - Jan 1 1980|
|Event||Proc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl|
Duration: Oct 13 1980 → Oct 17 1980
All Science Journal Classification (ASJC) codes