SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

M. J. Kardauskas, S. J. Fonash, S Ashok, S. V. Krishnaswamy, R. F. Messier

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

Original languageEnglish (US)
Pages (from-to)376-378
Number of pages3
JournalJournal of vacuum science & technology
Volume18
Issue number2
DOIs
StatePublished - Jan 1 1980
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 1 - Detroit, MI, Engl
Duration: Oct 13 1980Oct 17 1980

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Ohmic contacts
Iron oxides
Heterojunctions
Silicon
Film thickness

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kardauskas, M. J., Fonash, S. J., Ashok, S., Krishnaswamy, S. V., & Messier, R. F. (1980). SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES. Journal of vacuum science & technology, 18(2), 376-378. https://doi.org/10.1116/1.570789
Kardauskas, M. J. ; Fonash, S. J. ; Ashok, S ; Krishnaswamy, S. V. ; Messier, R. F. / SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES. In: Journal of vacuum science & technology. 1980 ; Vol. 18, No. 2. pp. 376-378.
@article{2a4343d159874241b89121b12890e218,
title = "SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.",
abstract = "Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.",
author = "Kardauskas, {M. J.} and Fonash, {S. J.} and S Ashok and Krishnaswamy, {S. V.} and Messier, {R. F.}",
year = "1980",
month = "1",
day = "1",
doi = "10.1116/1.570789",
language = "English (US)",
volume = "18",
pages = "376--378",
journal = "Journal of Vacuum Science and Technology",
issn = "0022-5355",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Kardauskas, MJ, Fonash, SJ, Ashok, S, Krishnaswamy, SV & Messier, RF 1980, 'SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.', Journal of vacuum science & technology, vol. 18, no. 2, pp. 376-378. https://doi.org/10.1116/1.570789

SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES. / Kardauskas, M. J.; Fonash, S. J.; Ashok, S; Krishnaswamy, S. V.; Messier, R. F.

In: Journal of vacuum science & technology, Vol. 18, No. 2, 01.01.1980, p. 376-378.

Research output: Contribution to journalConference article

TY - JOUR

T1 - SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES.

AU - Kardauskas, M. J.

AU - Fonash, S. J.

AU - Ashok, S

AU - Krishnaswamy, S. V.

AU - Messier, R. F.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

AB - Sputtered Fe//3O//4 films form rectifying junctions to p-type silicon but ohmic contacts to n-type Si. Ohmic contacts to this Fe//3O//4 can be provided by Au, Al, or spray-deposited ITO. The redox couple Fe (CN)//6**3** minus /Fe(CN)//6**4** minus also appears to make an effective ohmic contact to this iron oxide. The photovoltaic and electrical characteristics of the Fe//3O//4/p-Si heterojunction are found to depend strongly on the Fe//3O//4 film thickness.

UR - http://www.scopus.com/inward/record.url?scp=0018986441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018986441&partnerID=8YFLogxK

U2 - 10.1116/1.570789

DO - 10.1116/1.570789

M3 - Conference article

AN - SCOPUS:0018986441

VL - 18

SP - 376

EP - 378

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

SN - 0022-5355

IS - 2

ER -

Kardauskas MJ, Fonash SJ, Ashok S, Krishnaswamy SV, Messier RF. SPUTTERED IRON OXIDE/SILICON HETEROSTRUCTURES. Journal of vacuum science & technology. 1980 Jan 1;18(2):376-378. https://doi.org/10.1116/1.570789