Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit, Christopher Y. Cheng, Ryan Q. Rudy, Ronald G. Polcawich, Jeffrey S. Pulskamp, Daniel M. Potrepka, Brendan M. Hanrahan, Susan E. Trolier-McKinstry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

Original languageEnglish (US)
Title of host publication2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538655696
DOIs
StatePublished - Sep 6 2018
Event2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States
Duration: Jul 16 2018Jul 18 2018

Publication series

Name2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Other

Other2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
CountryUnited States
CityAnn Arbor
Period7/16/187/18/18

Fingerprint

Aluminum Oxide
Silicon
Sapphire
Lead
Thin films
Substrates
Ferroelectric materials
MEMS
Hysteresis
Capacitors
Permittivity
Tuning
Diffraction
Crystal structure
X rays
lead titanate zirconate

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Benoit, R. R., Cheng, C. Y., Rudy, R. Q., Polcawich, R. G., Pulskamp, J. S., Potrepka, D. M., ... Trolier-McKinstry, S. E. (2018). Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 [8457139] (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP.2018.8457139
Benoit, Robert R. ; Cheng, Christopher Y. ; Rudy, Ryan Q. ; Polcawich, Ronald G. ; Pulskamp, Jeffrey S. ; Potrepka, Daniel M. ; Hanrahan, Brendan M. ; Trolier-McKinstry, Susan E. / Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).
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title = "Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates",
abstract = "Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.",
author = "Benoit, {Robert R.} and Cheng, {Christopher Y.} and Rudy, {Ryan Q.} and Polcawich, {Ronald G.} and Pulskamp, {Jeffrey S.} and Potrepka, {Daniel M.} and Hanrahan, {Brendan M.} and Trolier-McKinstry, {Susan E.}",
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Benoit, RR, Cheng, CY, Rudy, RQ, Polcawich, RG, Pulskamp, JS, Potrepka, DM, Hanrahan, BM & Trolier-McKinstry, SE 2018, Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. in 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018., 8457139, 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Ann Arbor, United States, 7/16/18. https://doi.org/10.1109/IMWS-AMP.2018.8457139

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. / Benoit, Robert R.; Cheng, Christopher Y.; Rudy, Ryan Q.; Polcawich, Ronald G.; Pulskamp, Jeffrey S.; Potrepka, Daniel M.; Hanrahan, Brendan M.; Trolier-McKinstry, Susan E.

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8457139 (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

AU - Benoit, Robert R.

AU - Cheng, Christopher Y.

AU - Rudy, Ryan Q.

AU - Polcawich, Ronald G.

AU - Pulskamp, Jeffrey S.

AU - Potrepka, Daniel M.

AU - Hanrahan, Brendan M.

AU - Trolier-McKinstry, Susan E.

PY - 2018/9/6

Y1 - 2018/9/6

N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

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M3 - Conference contribution

AN - SCOPUS:85057612527

T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Benoit RR, Cheng CY, Rudy RQ, Polcawich RG, Pulskamp JS, Potrepka DM et al. Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8457139. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). https://doi.org/10.1109/IMWS-AMP.2018.8457139