Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit; Christopher Y. Cheng; Ryan Q. Rudy; Ronald G. Polcawich; Jeffrey S. Pulskamp; Daniel M. Potrepka; Brendan M. Hanrahan; Susan Trolier-Mckinstry

doi:10.1109/IMWS-AMP.2018.8457139

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit, Christopher Y. Cheng, Ryan Q. Rudy, Ronald G. Polcawich, Jeffrey S. Pulskamp, Daniel M. Potrepka, Brendan M. Hanrahan, Susan Trolier-Mckinstry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Sputtered Pb(Zr₅₂Ti₄₈)O₃ (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO₂ wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm²) and PREM (22.0 vs. 16.5 μV/cm²) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

Original language	English (US)
Title of host publication	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538655696
DOIs	https://doi.org/10.1109/IMWS-AMP.2018.8457139
State	Published - Sep 6 2018
Event	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States Duration: Jul 16 2018 → Jul 18 2018

Publication series

Name	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Other

Other	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Country	United States
City	Ann Arbor
Period	7/16/18 → 7/18/18

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All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Benoit, R. R., Cheng, C. Y., Rudy, R. Q., Polcawich, R. G., Pulskamp, J. S., Potrepka, D. M., Hanrahan, B. M., & Trolier-Mckinstry, S. (2018). Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 [8457139] (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP.2018.8457139

Benoit, Robert R. ; Cheng, Christopher Y. ; Rudy, Ryan Q. ; Polcawich, Ronald G. ; Pulskamp, Jeffrey S. ; Potrepka, Daniel M. ; Hanrahan, Brendan M. ; Trolier-Mckinstry, Susan. / Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).

@inproceedings{e87d6e5adbed4e91b95c4afc406ef275,

title = "Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates",

abstract = "Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.",

author = "Benoit, {Robert R.} and Cheng, {Christopher Y.} and Rudy, {Ryan Q.} and Polcawich, {Ronald G.} and Pulskamp, {Jeffrey S.} and Potrepka, {Daniel M.} and Hanrahan, {Brendan M.} and Susan Trolier-Mckinstry",

year = "2018",

month = sep,

day = "6",

doi = "10.1109/IMWS-AMP.2018.8457139",

language = "English (US)",

series = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018",

address = "United States",

note = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 ; Conference date: 16-07-2018 Through 18-07-2018",

}

Benoit, RR, Cheng, CY, Rudy, RQ, Polcawich, RG, Pulskamp, JS, Potrepka, DM, Hanrahan, BM & Trolier-Mckinstry, S 2018, Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. in 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018., 8457139, 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Ann Arbor, United States, 7/16/18. https://doi.org/10.1109/IMWS-AMP.2018.8457139

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. / Benoit, Robert R.; Cheng, Christopher Y.; Rudy, Ryan Q.; Polcawich, Ronald G.; Pulskamp, Jeffrey S.; Potrepka, Daniel M.; Hanrahan, Brendan M.; Trolier-Mckinstry, Susan.

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8457139 (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

AU - Benoit, Robert R.

AU - Cheng, Christopher Y.

AU - Rudy, Ryan Q.

AU - Polcawich, Ronald G.

AU - Pulskamp, Jeffrey S.

AU - Potrepka, Daniel M.

AU - Hanrahan, Brendan M.

AU - Trolier-Mckinstry, Susan

PY - 2018/9/6

Y1 - 2018/9/6

N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

UR - http://www.scopus.com/inward/record.url?scp=85057612527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057612527&partnerID=8YFLogxK

U2 - 10.1109/IMWS-AMP.2018.8457139

DO - 10.1109/IMWS-AMP.2018.8457139

M3 - Conference contribution

AN - SCOPUS:85057612527

T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Y2 - 16 July 2018 through 18 July 2018

ER -

Benoit RR, Cheng CY, Rudy RQ, Polcawich RG, Pulskamp JS, Potrepka DM et al. Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8457139. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). https://doi.org/10.1109/IMWS-AMP.2018.8457139

Access to Document

10.1109/IMWS-AMP.2018.8457139