Abstract
Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781538655696 |
| DOIs | |
| State | Published - Sep 6 2018 |
| Event | 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States Duration: Jul 16 2018 → Jul 18 2018 |
Publication series
| Name | 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 |
|---|
Other
| Other | 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 |
|---|---|
| Country | United States |
| City | Ann Arbor |
| Period | 7/16/18 → 7/18/18 |
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All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
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Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. / Benoit, Robert R.; Cheng, Christopher Y.; Rudy, Ryan Q.; Polcawich, Ronald G.; Pulskamp, Jeffrey S.; Potrepka, Daniel M.; Hanrahan, Brendan M.; Trolier-McKinstry, Susan E.
2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8457139 (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates
AU - Benoit, Robert R.
AU - Cheng, Christopher Y.
AU - Rudy, Ryan Q.
AU - Polcawich, Ronald G.
AU - Pulskamp, Jeffrey S.
AU - Potrepka, Daniel M.
AU - Hanrahan, Brendan M.
AU - Trolier-McKinstry, Susan E.
PY - 2018/9/6
Y1 - 2018/9/6
N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
UR - http://www.scopus.com/inward/record.url?scp=85057612527&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057612527&partnerID=8YFLogxK
U2 - 10.1109/IMWS-AMP.2018.8457139
DO - 10.1109/IMWS-AMP.2018.8457139
M3 - Conference contribution
AN - SCOPUS:85057612527
T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -