TY - GEN
T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates
AU - Benoit, Robert R.
AU - Cheng, Christopher Y.
AU - Rudy, Ryan Q.
AU - Polcawich, Ronald G.
AU - Pulskamp, Jeffrey S.
AU - Potrepka, Daniel M.
AU - Hanrahan, Brendan M.
AU - Trolier-Mckinstry, Susan
PY - 2018/9/6
Y1 - 2018/9/6
N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.
UR - http://www.scopus.com/inward/record.url?scp=85057612527&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85057612527&partnerID=8YFLogxK
U2 - 10.1109/IMWS-AMP.2018.8457139
DO - 10.1109/IMWS-AMP.2018.8457139
M3 - Conference contribution
AN - SCOPUS:85057612527
T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Y2 - 16 July 2018 through 18 July 2018
ER -