Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit, Christopher Y. Cheng, Ryan Q. Rudy, Ronald G. Polcawich, Jeffrey S. Pulskamp, Daniel M. Potrepka, Brendan M. Hanrahan, Susan Trolier-Mckinstry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

Original languageEnglish (US)
Title of host publication2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538655696
DOIs
StatePublished - Sep 6 2018
Event2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States
Duration: Jul 16 2018Jul 18 2018

Publication series

Name2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Other

Other2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
CountryUnited States
CityAnn Arbor
Period7/16/187/18/18

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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