Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit; Christopher Y. Cheng; Ryan Q. Rudy; Ronald G. Polcawich; Jeffrey S. Pulskamp; Daniel M. Potrepka; Brendan M. Hanrahan; Susan Trolier-Mckinstry

doi:10.1109/IMWS-AMP.2018.8457139

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

Robert R. Benoit, Christopher Y. Cheng, Ryan Q. Rudy, Ronald G. Polcawich, Jeffrey S. Pulskamp, Daniel M. Potrepka, Brendan M. Hanrahan, Susan Trolier-Mckinstry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Sputtered Pb(Zr₅₂Ti₄₈)O₃ (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO₂ wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm²) and PREM (22.0 vs. 16.5 μV/cm²) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

Original language	English (US)
Title of host publication	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538655696
DOIs	https://doi.org/10.1109/IMWS-AMP.2018.8457139
State	Published - Sep 6 2018
Event	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 - Ann Arbor, United States Duration: Jul 16 2018 → Jul 18 2018

Publication series

Name	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Other

Other	2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018
Country	United States
City	Ann Arbor
Period	7/16/18 → 7/18/18

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IMWS-AMP.2018.8457139

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Benoit, R. R., Cheng, C. Y., Rudy, R. Q., Polcawich, R. G., Pulskamp, J. S., Potrepka, D. M., Hanrahan, B. M., & Trolier-Mckinstry, S. (2018). Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 [8457139] (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMWS-AMP.2018.8457139

Benoit, Robert R. ; Cheng, Christopher Y. ; Rudy, Ryan Q. ; Polcawich, Ronald G. ; Pulskamp, Jeffrey S. ; Potrepka, Daniel M. ; Hanrahan, Brendan M. ; Trolier-Mckinstry, Susan. / Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).

@inproceedings{e87d6e5adbed4e91b95c4afc406ef275,

title = "Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates",

abstract = "Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.",

author = "Benoit, {Robert R.} and Cheng, {Christopher Y.} and Rudy, {Ryan Q.} and Polcawich, {Ronald G.} and Pulskamp, {Jeffrey S.} and Potrepka, {Daniel M.} and Hanrahan, {Brendan M.} and Susan Trolier-Mckinstry",

year = "2018",

month = sep,

day = "6",

doi = "10.1109/IMWS-AMP.2018.8457139",

language = "English (US)",

series = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018",

address = "United States",

note = "2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018 ; Conference date: 16-07-2018 Through 18-07-2018",

}

Benoit, RR, Cheng, CY, Rudy, RQ, Polcawich, RG, Pulskamp, JS, Potrepka, DM, Hanrahan, BM & Trolier-Mckinstry, S 2018, Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. in 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018., 8457139, 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018, Ann Arbor, United States, 7/16/18. https://doi.org/10.1109/IMWS-AMP.2018.8457139

Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. / Benoit, Robert R.; Cheng, Christopher Y.; Rudy, Ryan Q.; Polcawich, Ronald G.; Pulskamp, Jeffrey S.; Potrepka, Daniel M.; Hanrahan, Brendan M.; Trolier-Mckinstry, Susan.

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8457139 (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates

AU - Benoit, Robert R.

AU - Cheng, Christopher Y.

AU - Rudy, Ryan Q.

AU - Polcawich, Ronald G.

AU - Pulskamp, Jeffrey S.

AU - Potrepka, Daniel M.

AU - Hanrahan, Brendan M.

AU - Trolier-Mckinstry, Susan

PY - 2018/9/6

Y1 - 2018/9/6

N2 - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

AB - Sputtered Pb(Zr52Ti48)O3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO2 wafers. PZT films deposited on SOS show improvement in PMAX (46.2 vs. 42.1 μV/cm2) and PREM (22.0 vs. 16.5 μV/cm2) over films deposited on Si. A decrease in maximum ϵr from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using x-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangentare studied using fabricated capacitor structures.

UR - http://www.scopus.com/inward/record.url?scp=85057612527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057612527&partnerID=8YFLogxK

U2 - 10.1109/IMWS-AMP.2018.8457139

DO - 10.1109/IMWS-AMP.2018.8457139

M3 - Conference contribution

AN - SCOPUS:85057612527

T3 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

BT - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018

Y2 - 16 July 2018 through 18 July 2018

ER -

Benoit RR, Cheng CY, Rudy RQ, Polcawich RG, Pulskamp JS, Potrepka DM et al. Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates. In 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8457139. (2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2018). https://doi.org/10.1109/IMWS-AMP.2018.8457139