Sr2AlTaO6 films for multilayer high-temperature superconducting device applications

A. T. Findikoglu, C. Doughty, S. Bhattacharya, Qi Li, X. X. Xi, T. Venkatesan, R. E. Fahey, A. J. Strauss, Julia M. Phillips

Research output: Contribution to journalArticle

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Abstract

Thin films of Sr2AlTaO6 (SAT) and multilayers of YBa2Cu3O7 (YBCO)/SAT have been grown by pulsed laser deposition on [001] LaAlO3 substrates. X-ray diffraction shows that SAT grows on [001] LaAlO3 with the c-axis oriented normal to the substrate plane. X-ray rocking curve and Rutherford backscattering channeling measurements on SAT films yield full width at half maximum of <0.3°and minimum backscattering yield χmin of 5%-7%, respectively, indicating good crystallinity. The real part of the dielectric constant εr is found to be ∼23-30, with ∼6×107 V/m static breakdown electric field. Both the dielectric constant and the static breakdown field show negligible temperature dependence between 10 and 300 K. A 100 nm×10 μm×50 μm YBCO film on SAT shows zero-field critical current density of ∼1.3×106 A/cm2 at 77 K, with a superconducting transition temperature Tc0 of ∼89.2 K.

Original languageEnglish (US)
Pages (from-to)1718-1720
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - Dec 1 1992

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superconducting devices
backscattering
breakdown
permittivity
pulsed laser deposition
crystallinity
critical current
x rays
transition temperature
current density
temperature dependence
electric fields
curves
thin films
diffraction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Findikoglu, A. T., Doughty, C., Bhattacharya, S., Li, Q., Xi, X. X., Venkatesan, T., ... Phillips, J. M. (1992). Sr2AlTaO6 films for multilayer high-temperature superconducting device applications. Applied Physics Letters, 61(14), 1718-1720. https://doi.org/10.1063/1.108408
Findikoglu, A. T. ; Doughty, C. ; Bhattacharya, S. ; Li, Qi ; Xi, X. X. ; Venkatesan, T. ; Fahey, R. E. ; Strauss, A. J. ; Phillips, Julia M. / Sr2AlTaO6 films for multilayer high-temperature superconducting device applications. In: Applied Physics Letters. 1992 ; Vol. 61, No. 14. pp. 1718-1720.
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Findikoglu, AT, Doughty, C, Bhattacharya, S, Li, Q, Xi, XX, Venkatesan, T, Fahey, RE, Strauss, AJ & Phillips, JM 1992, 'Sr2AlTaO6 films for multilayer high-temperature superconducting device applications', Applied Physics Letters, vol. 61, no. 14, pp. 1718-1720. https://doi.org/10.1063/1.108408

Sr2AlTaO6 films for multilayer high-temperature superconducting device applications. / Findikoglu, A. T.; Doughty, C.; Bhattacharya, S.; Li, Qi; Xi, X. X.; Venkatesan, T.; Fahey, R. E.; Strauss, A. J.; Phillips, Julia M.

In: Applied Physics Letters, Vol. 61, No. 14, 01.12.1992, p. 1718-1720.

Research output: Contribution to journalArticle

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AU - Findikoglu, A. T.

AU - Doughty, C.

AU - Bhattacharya, S.

AU - Li, Qi

AU - Xi, X. X.

AU - Venkatesan, T.

AU - Fahey, R. E.

AU - Strauss, A. J.

AU - Phillips, Julia M.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Thin films of Sr2AlTaO6 (SAT) and multilayers of YBa2Cu3O7 (YBCO)/SAT have been grown by pulsed laser deposition on [001] LaAlO3 substrates. X-ray diffraction shows that SAT grows on [001] LaAlO3 with the c-axis oriented normal to the substrate plane. X-ray rocking curve and Rutherford backscattering channeling measurements on SAT films yield full width at half maximum of <0.3°and minimum backscattering yield χmin of 5%-7%, respectively, indicating good crystallinity. The real part of the dielectric constant εr is found to be ∼23-30, with ∼6×107 V/m static breakdown electric field. Both the dielectric constant and the static breakdown field show negligible temperature dependence between 10 and 300 K. A 100 nm×10 μm×50 μm YBCO film on SAT shows zero-field critical current density of ∼1.3×106 A/cm2 at 77 K, with a superconducting transition temperature Tc0 of ∼89.2 K.

AB - Thin films of Sr2AlTaO6 (SAT) and multilayers of YBa2Cu3O7 (YBCO)/SAT have been grown by pulsed laser deposition on [001] LaAlO3 substrates. X-ray diffraction shows that SAT grows on [001] LaAlO3 with the c-axis oriented normal to the substrate plane. X-ray rocking curve and Rutherford backscattering channeling measurements on SAT films yield full width at half maximum of <0.3°and minimum backscattering yield χmin of 5%-7%, respectively, indicating good crystallinity. The real part of the dielectric constant εr is found to be ∼23-30, with ∼6×107 V/m static breakdown electric field. Both the dielectric constant and the static breakdown field show negligible temperature dependence between 10 and 300 K. A 100 nm×10 μm×50 μm YBCO film on SAT shows zero-field critical current density of ∼1.3×106 A/cm2 at 77 K, with a superconducting transition temperature Tc0 of ∼89.2 K.

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Findikoglu AT, Doughty C, Bhattacharya S, Li Q, Xi XX, Venkatesan T et al. Sr2AlTaO6 films for multilayer high-temperature superconducting device applications. Applied Physics Letters. 1992 Dec 1;61(14):1718-1720. https://doi.org/10.1063/1.108408