Stability and charge transfer levels of extrinsic defects in LiNbO 3

Haixuan Xu, Aleksandr Chernatynskiy, Donghwa Lee, Susan B. Sinnott, Venkatraman Gopalan, Volkmar Dierolf, Simon R. Phillpot

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The technologically important incorporation of extrinsic defects (Mg 2+, Fe2+, Fe3+, Er3+, and Nd 3+) in LiNbO3 is investigated using density-functional theory combined with thermodynamic calculations. Defect energies, the charge compensation mechanisms, and charge transfer levels, are determined for congruent and stoichiometric compositions. In general, under congruent (Nb 2 O5 -rich) conditions impurities occupy lithium sites, compensated by lithium vacancies. Under stoichiometric (Li2 O -rich) conditions, impurities occupy both lithium and niobium sites. The effects of the concentration of Mg on the dominant defect and site occupancy are analyzed. In addition, the thermal ionization energy and relative defect stability order for Fe2+ and Fe3+ are evaluated. The charge transfer levels of impurities with regard to the band structure, and their influences on the optical properties of the material are elucidated.

Original languageEnglish (US)
Article number184109
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number18
DOIs
StatePublished - Nov 15 2010

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Charge transfer
Lithium
charge transfer
Defects
lithium
defects
Impurities
impurities
Niobium
Ionization potential
niobium
Band structure
Vacancies
Density functional theory
Optical properties
Thermodynamics
density functional theory
optical properties
ionization
thermodynamics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Xu, Haixuan ; Chernatynskiy, Aleksandr ; Lee, Donghwa ; Sinnott, Susan B. ; Gopalan, Venkatraman ; Dierolf, Volkmar ; Phillpot, Simon R. / Stability and charge transfer levels of extrinsic defects in LiNbO 3 In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 82, No. 18.
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Stability and charge transfer levels of extrinsic defects in LiNbO 3 . / Xu, Haixuan; Chernatynskiy, Aleksandr; Lee, Donghwa; Sinnott, Susan B.; Gopalan, Venkatraman; Dierolf, Volkmar; Phillpot, Simon R.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 18, 184109, 15.11.2010.

Research output: Contribution to journalArticle

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