Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers

Jay J. Senkevich, B. Wang, J. B. Fortin, M. C. Nielsen, J. F. McDonald, T. M. Lu, G. M. Nuesca, G. G. Peterson, S. C. Selbrede, M. T. Weise

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The fluorine stability of two parylenes, aliphatic-fluorinated AF-4 (α, α, α′, α′ poly(p-tetrafluoroxylylene) and aromatic-fluorinated VT-4 (2, 3, 5, 6 poly(p-tetrafluoroxylylene), were investigated underneath Al, Al2O3, and TaNX overlayers with and without exposure to oxygen reactive-ion etching (RIE). No fluorine diffusion was observed for Al films deposited onto the as-received parylenes. However, after oxygen RIE, x-ray photoelectron spectroscopy (XPS) depth profiling detected fluorine diffusion throughout Al and to a lesser extent Al2O3 but in contrast to Ta2.67N. Metal-fluoride bonding was evident at the metal/parylene interface for all the overlayers after the parylene was exposed to oxygen RIE and annealed.

Original languageEnglish (US)
Pages (from-to)925-931
Number of pages7
JournalJournal of Electronic Materials
Volume32
Issue number9
DOIs
StatePublished - Sep 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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