Stability of ZrO 2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures

Susanne Stemmer, Zhiqiang Chen, Ralf Keding, Jon-Paul Maria, Dwi Wicaksana, Angus I. Kingon

Research output: Contribution to journalArticle

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Abstract

Electron energy-loss spectroscopy and high-resolution transmission electron microscopy were used to investigate ZrO 2 layers grown by electron-beam evaporation in a molecular-beam epitaxy system. ZrO 2/Si layers were investigated before and after uncapped annealing at 1000°C under different oxygen partial pressures. The thickness of a SiO 2-like, low-dielectric constant layer at the silicon interface was found to depend on the oxygen partial pressure during annealing. At oxygen partial pressures of about 10 -4torr the interfacial silicon oxide thickness increased through oxygen diffusion through the ZrO 2 layer and silicon consumption at the interface. At oxygen partial pressures in the range of approximately 10 -5torr, only a thin (1 nm) interfacial silicon oxide layer was present, as required for low-equivalent oxide thicknesses of gate stacks incorporating alternative oxides. Further reduction of the oxygen partial pressures (about 10 -7torr) during annealing resulted in zirconium silicide formation at the interface. ZrO 2 films annealed at the optimal partial pressure for a thin interfacial oxide were found to crystallize and contain no silicon. High-resolution analytical capabilities afforded by scanning transmission electron microscopy techniques proved essential in analyzing the stability of these ultrathin layers.

Original languageEnglish (US)
Pages (from-to)82-86
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number1
DOIs
StatePublished - Jul 1 2002

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partial pressure
oxygen
silicon oxides
annealing
oxides
silicon
transmission electron microscopy
high resolution
molecular beam epitaxy
energy dissipation
evaporation
electron beams
electron energy
permittivity
scanning electron microscopy
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Stemmer, Susanne ; Chen, Zhiqiang ; Keding, Ralf ; Maria, Jon-Paul ; Wicaksana, Dwi ; Kingon, Angus I. / Stability of ZrO 2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 1. pp. 82-86.
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Stability of ZrO 2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures. / Stemmer, Susanne; Chen, Zhiqiang; Keding, Ralf; Maria, Jon-Paul; Wicaksana, Dwi; Kingon, Angus I.

In: Journal of Applied Physics, Vol. 92, No. 1, 01.07.2002, p. 82-86.

Research output: Contribution to journalArticle

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