Stability Research in Bridge Circuit with a 650V GaN HDGIT

Hongyu Liu, Yan Li, Qing Tang, Fangwei Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium Nitride (GaN) transistors present an opportunity in power electronics to achieve excellent performance. However, GaN devices still face challenges before they are widely used due to the technology maturity. The switching speed of GaN devices is extremely fast in power electronics applications. The large dv/dt and di/dt can couple with parasitic parameters in the device and the power loop, which can lead to unintended high frequency oscillations and stability problems in GaN-based circuits. The oscillations of voltage and current are easily happened, especially in bridge structure, which make it difficult for high frequency application. The purpose of this paper is to study this behavior based on the negative conductance oscillator theory and double pulse test circuit is chosen to study the stability of GaN-based bridge circuit. A negative conductance oscillator model is constructed to analyze this behavior based on negative conductance oscillator theory. The accuracy of the model is verified by a simulation study and experiment involving Hybrid Drain-embedded Gate Injection Transistor (HDGIT).

Original languageEnglish (US)
Title of host publicationProceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538660539
DOIs
Publication statusPublished - Dec 26 2018
Event2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 - Shenzhen, China
Duration: Nov 4 2018Nov 7 2018

Publication series

NameProceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

Conference

Conference2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
CountryChina
CityShenzhen
Period11/4/1811/7/18

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All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Liu, H., Li, Y., Tang, Q., & Zhao, F. (2018). Stability Research in Bridge Circuit with a 650V GaN HDGIT. In Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 [8590247] (Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEAC.2018.8590247