Stability Research in Bridge Circuit with a 650V GaN HDGIT

Hongyu Liu, Yan Li, Qing Tang, Fangwei Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Gallium Nitride (GaN) transistors present an opportunity in power electronics to achieve excellent performance. However, GaN devices still face challenges before they are widely used due to the technology maturity. The switching speed of GaN devices is extremely fast in power electronics applications. The large dv/dt and di/dt can couple with parasitic parameters in the device and the power loop, which can lead to unintended high frequency oscillations and stability problems in GaN-based circuits. The oscillations of voltage and current are easily happened, especially in bridge structure, which make it difficult for high frequency application. The purpose of this paper is to study this behavior based on the negative conductance oscillator theory and double pulse test circuit is chosen to study the stability of GaN-based bridge circuit. A negative conductance oscillator model is constructed to analyze this behavior based on negative conductance oscillator theory. The accuracy of the model is verified by a simulation study and experiment involving Hybrid Drain-embedded Gate Injection Transistor (HDGIT).

Original languageEnglish (US)
Title of host publicationProceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538660539
DOIs
StatePublished - Dec 26 2018
Event2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 - Shenzhen, China
Duration: Nov 4 2018Nov 7 2018

Publication series

NameProceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

Conference

Conference2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
CountryChina
CityShenzhen
Period11/4/1811/7/18

Fingerprint

Bridge circuits
Gallium nitride
Transistors
Power electronics
Networks (circuits)
Electric potential
Experiments

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Liu, H., Li, Y., Tang, Q., & Zhao, F. (2018). Stability Research in Bridge Circuit with a 650V GaN HDGIT. In Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 [8590247] (Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEAC.2018.8590247
Liu, Hongyu ; Li, Yan ; Tang, Qing ; Zhao, Fangwei. / Stability Research in Bridge Circuit with a 650V GaN HDGIT. Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. (Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018).
@inproceedings{5b1dc34c50654281bf33596f9ecab7d3,
title = "Stability Research in Bridge Circuit with a 650V GaN HDGIT",
abstract = "Gallium Nitride (GaN) transistors present an opportunity in power electronics to achieve excellent performance. However, GaN devices still face challenges before they are widely used due to the technology maturity. The switching speed of GaN devices is extremely fast in power electronics applications. The large dv/dt and di/dt can couple with parasitic parameters in the device and the power loop, which can lead to unintended high frequency oscillations and stability problems in GaN-based circuits. The oscillations of voltage and current are easily happened, especially in bridge structure, which make it difficult for high frequency application. The purpose of this paper is to study this behavior based on the negative conductance oscillator theory and double pulse test circuit is chosen to study the stability of GaN-based bridge circuit. A negative conductance oscillator model is constructed to analyze this behavior based on negative conductance oscillator theory. The accuracy of the model is verified by a simulation study and experiment involving Hybrid Drain-embedded Gate Injection Transistor (HDGIT).",
author = "Hongyu Liu and Yan Li and Qing Tang and Fangwei Zhao",
year = "2018",
month = "12",
day = "26",
doi = "10.1109/PEAC.2018.8590247",
language = "English (US)",
series = "Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018",
address = "United States",

}

Liu, H, Li, Y, Tang, Q & Zhao, F 2018, Stability Research in Bridge Circuit with a 650V GaN HDGIT. in Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018., 8590247, Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018, Institute of Electrical and Electronics Engineers Inc., 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018, Shenzhen, China, 11/4/18. https://doi.org/10.1109/PEAC.2018.8590247

Stability Research in Bridge Circuit with a 650V GaN HDGIT. / Liu, Hongyu; Li, Yan; Tang, Qing; Zhao, Fangwei.

Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8590247 (Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Stability Research in Bridge Circuit with a 650V GaN HDGIT

AU - Liu, Hongyu

AU - Li, Yan

AU - Tang, Qing

AU - Zhao, Fangwei

PY - 2018/12/26

Y1 - 2018/12/26

N2 - Gallium Nitride (GaN) transistors present an opportunity in power electronics to achieve excellent performance. However, GaN devices still face challenges before they are widely used due to the technology maturity. The switching speed of GaN devices is extremely fast in power electronics applications. The large dv/dt and di/dt can couple with parasitic parameters in the device and the power loop, which can lead to unintended high frequency oscillations and stability problems in GaN-based circuits. The oscillations of voltage and current are easily happened, especially in bridge structure, which make it difficult for high frequency application. The purpose of this paper is to study this behavior based on the negative conductance oscillator theory and double pulse test circuit is chosen to study the stability of GaN-based bridge circuit. A negative conductance oscillator model is constructed to analyze this behavior based on negative conductance oscillator theory. The accuracy of the model is verified by a simulation study and experiment involving Hybrid Drain-embedded Gate Injection Transistor (HDGIT).

AB - Gallium Nitride (GaN) transistors present an opportunity in power electronics to achieve excellent performance. However, GaN devices still face challenges before they are widely used due to the technology maturity. The switching speed of GaN devices is extremely fast in power electronics applications. The large dv/dt and di/dt can couple with parasitic parameters in the device and the power loop, which can lead to unintended high frequency oscillations and stability problems in GaN-based circuits. The oscillations of voltage and current are easily happened, especially in bridge structure, which make it difficult for high frequency application. The purpose of this paper is to study this behavior based on the negative conductance oscillator theory and double pulse test circuit is chosen to study the stability of GaN-based bridge circuit. A negative conductance oscillator model is constructed to analyze this behavior based on negative conductance oscillator theory. The accuracy of the model is verified by a simulation study and experiment involving Hybrid Drain-embedded Gate Injection Transistor (HDGIT).

UR - http://www.scopus.com/inward/record.url?scp=85061015147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061015147&partnerID=8YFLogxK

U2 - 10.1109/PEAC.2018.8590247

DO - 10.1109/PEAC.2018.8590247

M3 - Conference contribution

AN - SCOPUS:85061015147

T3 - Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

BT - Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liu H, Li Y, Tang Q, Zhao F. Stability Research in Bridge Circuit with a 650V GaN HDGIT. In Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8590247. (Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018). https://doi.org/10.1109/PEAC.2018.8590247