Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride

David T. Krick, Patrick M. Lenahan, J. Kanicki

Research output: Contribution to journalArticle

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Abstract

Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.

Original languageEnglish (US)
Pages (from-to)608-610
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number8
DOIs
StatePublished - Dec 1 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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