Stacking fault in Bi2Te3 and Sb2Te 3 single crystals

Bhakti Jariwala, D. V. Shah

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The structural characterizations of the Bi2Te3 and Sb2Te3 single crystals grown by the Zone melting method have been carried out by XRD and Chemical Etching process. The top free surface of as-grown Bi2Te3 and Sb2Te3 single crystal were observed under optical microscope. The particle size was calculated for a number of reflections using Scherrer's formula by X-ray diffraction method. By the use of XRD data, the growth and deformation fault probability has been estimated for the grown single crystals. The presence of stacking fault in the lattice structure of the grown crystals was verified by the probability of growth and dislocation fault. Also new dislocation etchant has been developed by the successive trialerror method. Dislocation etching was achieved on (1 1 1) crystal plane examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch pits on the cleavage surface for an appropriate etching time 30 s. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting.

Original languageEnglish (US)
Pages (from-to)1179-1183
Number of pages5
JournalJournal of Crystal Growth
Volume318
Issue number1
DOIs
StatePublished - Mar 1 2011

Fingerprint

Stacking faults
crystal defects
Nitric Acid
Etching
Citric acid
Single crystals
etchants
Nitric acid
Citric Acid
single crystals
citric acid
etching
Zone melting
nitric acid
Crystals
Crystal lattices
Microscopes
Particle size
zone melting
acids

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Jariwala, Bhakti ; Shah, D. V. / Stacking fault in Bi2Te3 and Sb2Te 3 single crystals. In: Journal of Crystal Growth. 2011 ; Vol. 318, No. 1. pp. 1179-1183.
@article{582de2b5c923440690e09fb505903ce8,
title = "Stacking fault in Bi2Te3 and Sb2Te 3 single crystals",
abstract = "The structural characterizations of the Bi2Te3 and Sb2Te3 single crystals grown by the Zone melting method have been carried out by XRD and Chemical Etching process. The top free surface of as-grown Bi2Te3 and Sb2Te3 single crystal were observed under optical microscope. The particle size was calculated for a number of reflections using Scherrer's formula by X-ray diffraction method. By the use of XRD data, the growth and deformation fault probability has been estimated for the grown single crystals. The presence of stacking fault in the lattice structure of the grown crystals was verified by the probability of growth and dislocation fault. Also new dislocation etchant has been developed by the successive trialerror method. Dislocation etching was achieved on (1 1 1) crystal plane examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch pits on the cleavage surface for an appropriate etching time 30 s. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting.",
author = "Bhakti Jariwala and Shah, {D. V.}",
year = "2011",
month = "3",
day = "1",
doi = "10.1016/j.jcrysgro.2010.10.213",
language = "English (US)",
volume = "318",
pages = "1179--1183",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

Stacking fault in Bi2Te3 and Sb2Te 3 single crystals. / Jariwala, Bhakti; Shah, D. V.

In: Journal of Crystal Growth, Vol. 318, No. 1, 01.03.2011, p. 1179-1183.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stacking fault in Bi2Te3 and Sb2Te 3 single crystals

AU - Jariwala, Bhakti

AU - Shah, D. V.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The structural characterizations of the Bi2Te3 and Sb2Te3 single crystals grown by the Zone melting method have been carried out by XRD and Chemical Etching process. The top free surface of as-grown Bi2Te3 and Sb2Te3 single crystal were observed under optical microscope. The particle size was calculated for a number of reflections using Scherrer's formula by X-ray diffraction method. By the use of XRD data, the growth and deformation fault probability has been estimated for the grown single crystals. The presence of stacking fault in the lattice structure of the grown crystals was verified by the probability of growth and dislocation fault. Also new dislocation etchant has been developed by the successive trialerror method. Dislocation etching was achieved on (1 1 1) crystal plane examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch pits on the cleavage surface for an appropriate etching time 30 s. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting.

AB - The structural characterizations of the Bi2Te3 and Sb2Te3 single crystals grown by the Zone melting method have been carried out by XRD and Chemical Etching process. The top free surface of as-grown Bi2Te3 and Sb2Te3 single crystal were observed under optical microscope. The particle size was calculated for a number of reflections using Scherrer's formula by X-ray diffraction method. By the use of XRD data, the growth and deformation fault probability has been estimated for the grown single crystals. The presence of stacking fault in the lattice structure of the grown crystals was verified by the probability of growth and dislocation fault. Also new dislocation etchant has been developed by the successive trialerror method. Dislocation etching was achieved on (1 1 1) crystal plane examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch pits on the cleavage surface for an appropriate etching time 30 s. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting.

UR - http://www.scopus.com/inward/record.url?scp=79952737669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952737669&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.10.213

DO - 10.1016/j.jcrysgro.2010.10.213

M3 - Article

AN - SCOPUS:79952737669

VL - 318

SP - 1179

EP - 1183

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -