Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor

Amy Romero, Christina DiMarino, Rolando Burgos, Ray Li, Mary Chen, Yu Cao, Rongming Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL’s cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization which shows a breakdown voltage of 600 V, as well as the transfer characteristics, output characteristics, and the on-state resistance with respect to current. The device is then switched at various voltages and currents with voltage switching speeds up to 97 V/ns. The device is successfully switched up to 450 V under a 2 A load current.

Original languageEnglish (US)
Title of host publication2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages413-418
Number of pages6
ISBN (Electronic)9781509029983
DOIs
StatePublished - Nov 3 2017
Event9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume2017-January

Other

Other9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
CountryUnited States
CityCincinnati
Period10/1/1710/5/17

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All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization

Cite this

Romero, A., DiMarino, C., Burgos, R., Li, R., Chen, M., Cao, Y., & Chu, R. (2017). Static and dynamic characterization of a GaN-on-GaN 600 v, 2 a vertical transistor. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017 (pp. 413-418). [8095812] (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2017.8095812