Steady state and transient thermal characterization of vertical GaN PIN diodes

Georges Pavlidis, James Dallas, Sukwon Choi, Shyh Chiang Shen, Samuel Graham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device's peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.

Original languageEnglish (US)
Title of host publicationASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems
PublisherAmerican Society of Mechanical Engineers
ISBN (Electronic)9780791858097
DOIs
StatePublished - Jan 1 2017
EventASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems - San Francisco, United States
Duration: Aug 29 2017Sep 1 2017

Other

OtherASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems
CountryUnited States
CitySan Francisco
Period8/29/179/1/17

Fingerprint

Diodes
Sapphire
Substrates
Temperature
Temperature distribution
Joule heating
Hot Temperature
Nanoparticles
Imaging techniques
Metals

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Pavlidis, G., Dallas, J., Choi, S., Shen, S. C., & Graham, S. (2017). Steady state and transient thermal characterization of vertical GaN PIN diodes. In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems American Society of Mechanical Engineers. https://doi.org/10.1115/IPACK2017-74149
Pavlidis, Georges ; Dallas, James ; Choi, Sukwon ; Shen, Shyh Chiang ; Graham, Samuel. / Steady state and transient thermal characterization of vertical GaN PIN diodes. ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017.
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abstract = "In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device's peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.",
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Pavlidis, G, Dallas, J, Choi, S, Shen, SC & Graham, S 2017, Steady state and transient thermal characterization of vertical GaN PIN diodes. in ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems, San Francisco, United States, 8/29/17. https://doi.org/10.1115/IPACK2017-74149

Steady state and transient thermal characterization of vertical GaN PIN diodes. / Pavlidis, Georges; Dallas, James; Choi, Sukwon; Shen, Shyh Chiang; Graham, Samuel.

ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Steady state and transient thermal characterization of vertical GaN PIN diodes

AU - Pavlidis, Georges

AU - Dallas, James

AU - Choi, Sukwon

AU - Shen, Shyh Chiang

AU - Graham, Samuel

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device's peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.

AB - In this work, we investigate the thermal response of GaN PIN diodes grown on a sapphire substrate and compare the results to GaN PIN diodes grown on a free standing GaN substrate (FS-GaN). Until now, thermal characterization techniques have been developed to assess the temperature distribution across lateral devices. Raman thermometry has shown to accurately measure the temperature rise across the depth of the GaN layer. Implementing this technique to assess the temperature distribution across the depth of a vertical GaN device is more challenging since a volumetric depth average is measured. The use of TiO2 nanoparticles is shown to overcome this issue and reduce the uncertainty in the peak temperature by probing a surface temperature on top of the device. For the sapphire substrate, an additional temperature rise of about 15 K was seen on the surface of the PIN diode as compared to the average in the bulk. While the steady state thermal measurements show an accurate estimation of the device's peak temperature, the PIN diodes are normally operated under pulsed conditions and the thermal response of these devices under periodic joule heating must be assessed. A recently developed transient thermoreflectance imaging technique (TTI) is used in this study to monitor transient temperature rise and decay of top metal contact. Under the same biasing conditions, the FS-GaN PIN diode is found to result in less than half the temperature rise obtained by the sapphire substrate diode. Extracting time constants, a longer rise and decay is also observed in the sapphire substrate diode.

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DO - 10.1115/IPACK2017-74149

M3 - Conference contribution

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BT - ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems

PB - American Society of Mechanical Engineers

ER -

Pavlidis G, Dallas J, Choi S, Shen SC, Graham S. Steady state and transient thermal characterization of vertical GaN PIN diodes. In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2017, collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers. 2017 https://doi.org/10.1115/IPACK2017-74149