Steep-slope devices: From dark to dim silicon

Karthik Swaminathan, Emre Kultursay, Vinay Saripalli, Vijaykrishnan Narayanan, Mahmut T. Kandemir, Suman Datta

Research output: Contribution to journalArticle

37 Scopus citations


Although the superior subthreshold characteristics of steep-slope devices can help power up more cores, researchers still need CMOS technology to accelerate sequential applications, because it can reach higher frequencies. Device-level heterogeneous multicores can give the best of both worlds, but they need smart resource management to realize this promise. In this article, the authors discuss device-level heterogeneous multicores and various resource-management schemes for reaching higher energy efficiency.

Original languageEnglish (US)
Article number6576745
Pages (from-to)50-59
Number of pages10
JournalIEEE Micro
Issue number5
StatePublished - Oct 31 2013

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Swaminathan, K., Kultursay, E., Saripalli, V., Narayanan, V., Kandemir, M. T., & Datta, S. (2013). Steep-slope devices: From dark to dim silicon. IEEE Micro, 33(5), 50-59. [6576745].