Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications

Huichu Liu, Suman Datta, Vijaykrishnan Narayanan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

60 Scopus citations

Abstract

Steep switching Tunnel FETs (TFET) can extend the supply voltage scaling with improved energy efficiency for both digital and analog/RF application. In this paper, recent approaches on III-V Tunnel FET device design, prototype device demonstration, modeling techniques and performance evaluations for digital and analog/RF application are discussed and compared to CMOS technology. The impact of steep switching, uni-directional conduction and negative differential resistance characteristics are explored from circuit design perspective. Circuit-level implementation such as III-V TFET based Adder and SRAM design shows significant improvement on energy efficiency and power reduction below 0.3V for digital application. The analog/RF metric evaluation is presented including gm/Ids metric, temperature sensitivity, parasitic impact and noise performance. TFETs exhibit promising performance for high frequency, high sensitivity and ultra-low power RF rectifier application.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2013
Pages145-150
Number of pages6
DOIs
StatePublished - Dec 11 2013
Event2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013 - Beijing, China
Duration: Sep 4 2013Sep 6 2013

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Other

Other2013 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2013
CountryChina
CityBeijing
Period9/4/139/6/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications'. Together they form a unique fingerprint.

  • Cite this

    Liu, H., Datta, S., & Narayanan, V. (2013). Steep switching tunnel FET: A promise to extend the energy efficient roadmap for post-CMOS digital and analog/RF applications. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2013 (pp. 145-150). [6629285] (Proceedings of the International Symposium on Low Power Electronics and Design). https://doi.org/10.1109/ISLPED.2013.6629285