Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7°. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.
|Original language||English (US)|
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1998|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics