Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Christopher T. Shelton, Isaac Bryan, Elizabeth A. Paisley, Edward Sachet, Jon F. Ihlefeld, Nick Lavrik, Ramón Collazo, Zlatko Sitar, Jon Paul Maria

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

Original languageEnglish (US)
Article number096109
JournalAPL Materials
Volume5
Issue number9
DOIs
StatePublished - Sep 1 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

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    Shelton, C. T., Bryan, I., Paisley, E. A., Sachet, E., Ihlefeld, J. F., Lavrik, N., Collazo, R., Sitar, Z., & Maria, J. P. (2017). Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. APL Materials, 5(9), [096109]. https://doi.org/10.1063/1.4993840