Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

Christopher T. Shelton, Isaac Bryan, Elizabeth A. Paisley, Edward Sachet, Jon F. Ihlefeld, Nick Lavrik, Ramón Collazo, Zlatko Sitar, Jon-Paul Maria

Research output: Contribution to journalArticle

Abstract

A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

Original languageEnglish (US)
Article number096109
JournalAPL Materials
Volume5
Issue number9
DOIs
StatePublished - Sep 1 2017

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Vapor phase epitaxy
Dislocations (crystals)
Metals
Adatoms
Supersaturation
Heterojunctions
Single crystals
Semiconductor materials
Crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Shelton, C. T., Bryan, I., Paisley, E. A., Sachet, E., Ihlefeld, J. F., Lavrik, N., ... Maria, J-P. (2017). Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. APL Materials, 5(9), [096109]. https://doi.org/10.1063/1.4993840
Shelton, Christopher T. ; Bryan, Isaac ; Paisley, Elizabeth A. ; Sachet, Edward ; Ihlefeld, Jon F. ; Lavrik, Nick ; Collazo, Ramón ; Sitar, Zlatko ; Maria, Jon-Paul. / Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. In: APL Materials. 2017 ; Vol. 5, No. 9.
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Shelton, CT, Bryan, I, Paisley, EA, Sachet, E, Ihlefeld, JF, Lavrik, N, Collazo, R, Sitar, Z & Maria, J-P 2017, 'Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy', APL Materials, vol. 5, no. 9, 096109. https://doi.org/10.1063/1.4993840

Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. / Shelton, Christopher T.; Bryan, Isaac; Paisley, Elizabeth A.; Sachet, Edward; Ihlefeld, Jon F.; Lavrik, Nick; Collazo, Ramón; Sitar, Zlatko; Maria, Jon-Paul.

In: APL Materials, Vol. 5, No. 9, 096109, 01.09.2017.

Research output: Contribution to journalArticle

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AU - Bryan, Isaac

AU - Paisley, Elizabeth A.

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AU - Lavrik, Nick

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AU - Sitar, Zlatko

AU - Maria, Jon-Paul

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N2 - A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

AB - A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

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Shelton CT, Bryan I, Paisley EA, Sachet E, Ihlefeld JF, Lavrik N et al. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy. APL Materials. 2017 Sep 1;5(9). 096109. https://doi.org/10.1063/1.4993840