Stimulated emission from single- and multiple-quantum-well GaN-AlGaN separate-confinement heterostructures

D. A S Loeber, N. G. Anderson, Joan Marie Redwing, J. S. Flynn, G. M. Smith, M. A. Tischler

Research output: Contribution to journalArticle

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Abstract

Stimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

Original languageEnglish (US)
Pages (from-to)1203-1208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - 1997

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Stimulated emission
stimulated emission
Semiconductor quantum wells
Heterojunctions
quantum wells
Photoluminescence
photoluminescence
Optical pumping
Quantum well lasers
Metallorganic vapor phase epitaxy
thresholds
optical pumping
quantum well lasers
emission spectra
aluminum gallium nitride
Polarization
Geometry
Substrates
polarization
geometry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Loeber, D. A S ; Anderson, N. G. ; Redwing, Joan Marie ; Flynn, J. S. ; Smith, G. M. ; Tischler, M. A. / Stimulated emission from single- and multiple-quantum-well GaN-AlGaN separate-confinement heterostructures. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 449. pp. 1203-1208.
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abstract = "Stimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.",
author = "Loeber, {D. A S} and Anderson, {N. G.} and Redwing, {Joan Marie} and Flynn, {J. S.} and Smith, {G. M.} and Tischler, {M. A.}",
year = "1997",
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Stimulated emission from single- and multiple-quantum-well GaN-AlGaN separate-confinement heterostructures. / Loeber, D. A S; Anderson, N. G.; Redwing, Joan Marie; Flynn, J. S.; Smith, G. M.; Tischler, M. A.

In: Materials Research Society Symposium - Proceedings, Vol. 449, 1997, p. 1203-1208.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stimulated emission from single- and multiple-quantum-well GaN-AlGaN separate-confinement heterostructures

AU - Loeber, D. A S

AU - Anderson, N. G.

AU - Redwing, Joan Marie

AU - Flynn, J. S.

AU - Smith, G. M.

AU - Tischler, M. A.

PY - 1997

Y1 - 1997

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AB - Stimulated emission characteristics are examined for GaN-AlGaN separate-confinement quantum-well heterostructures grown by MOVPE on 4H-SiC substrates. We specifically focus on comparison of structures with different quantum well active region designs. Polarization resolved edge emission spectra and stimulated emission thresholds are obtained under optical pumping using a stripe excitation geometry. Stimulated emission characteristics are studied as a function of the number of quantum wells in the structure, and are correlated with surface photoluminescence properties. We find reduced stimulated emission thresholds and increased surface photoluminescence intensities as the number of quantum wells is reduced, with the best results obtained for a single-quantum-well structure. These results should provide useful information for the design of GaN-based quantum well lasers.

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